Power Integrations USB PD GaN Fast Charger Solution
Power Integrations' USB PD GaN Fast Charger solution combines our advanced InnoSwitch™ family with GaN (Gallium Nitride) technology to deliver ultra-high power density charging solutions. Our solution addresses the market demand for compact, high-power USB chargers that can deliver up to 140W+ while maintaining excellent efficiency and thermal performance.
The solution leverages our InnoSwitch4 family of ICs with zero-voltage switching (ZVS) technology, which minimizes switching losses and enables higher switching frequencies. Combined with GaN devices, this solution achieves exceptional power density while maintaining the exceptional reliability that Power Integrations is known for. The solution supports USB PD 3.0 with PPS (Programmable Power Supply) and all legacy protocols.
Our USB PD GaN solution stands out for its combination of high efficiency, small size, and robust protection features. Designers can achieve charger designs that are 30-50% smaller than traditional silicon-based solutions while maintaining excellent efficiency across the entire load range. LiTong Group, as an authorized PI distributor, provides comprehensive support for implementing USB PD GaN fast charger solutions.
LiTong FAE Review: "USB PD fast charging is one of the most challenging applications from both power density and efficiency perspectives. Our InnoSwitch4 family combined with GaN technology provides an exceptional solution with ZVS capability that minimizes switching losses. The ability to achieve high efficiency while operating at MHz frequencies enables truly compact charger designs. We see strong demand for these solutions in laptop chargers, multi-port chargers, and high-power mobile device chargers where size and efficiency are critical."
Recommended Products for USB PD GaN Applications
| Product | Series | Power Range | Application | Key Features | Datasheet |
|---|---|---|---|---|---|
| INN4168C-H101 | InnoSwitch4-CZ | Up to 140W | Multi-port USB PD | ZVS, GaN Compatible, High Density | Download |
| INN3870C-H101 | InnoSwitch3-Pro | Up to 100W | USB PD Prog. Output | I2C Control, PPS Support | Download |
| INN04110C-TL | InnoSwitch4 | Up to 200W | High-power Charger | ZVS, GaN Optimized | Download |
| INN0367C-H101 | InnoSwitch3-EP | Up to 65W | Compact Adapter | High Efficiency, Small Size | Download |
System Benefits
Ultra High Power Density
Smaller chargers with same or higher power output compared to silicon solutions.
High Efficiency
Over 94% efficiency across entire load range with ZVS technology.
Universal Compatibility
Supports USB PD 3.0 with PPS and all legacy protocols.
Thermal Performance
Lower heat generation due to reduced switching losses.
Alternative & Matching Solutions
For different power levels or requirements, consider these complementary solutions:
- For lower power: InnoSwitch3-CP/EP series with silicon MOSFETs
- For fixed output: InnoSwitch3-EP series
- For cost-sensitive: LinkSwitch solutions with opto feedback
USB PD GaN Fast Charger Solution FAQs
Q: What is the advantage of ZVS in USB PD chargers?
A: Zero-voltage switching significantly reduces switching losses, especially at high frequencies, enabling higher efficiency and higher power density.
Q: How does GaN technology improve charger performance?
A: GaN devices have lower switching and conduction losses than silicon, enabling higher frequency operation and smaller magnetic components.
Q: Can these solutions achieve universal input?
A: Yes, all our USB PD solutions support universal input (90-265VAC) for global compatibility.